4.8 Article

Flexopiezoelectricity at ferroelastic domain walls in WO3 films

Journal

NATURE COMMUNICATIONS
Volume 11, Issue 1, Pages -

Publisher

NATURE RESEARCH
DOI: 10.1038/s41467-020-18644-w

Keywords

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Funding

  1. National Research Foundation (NRF) of Korea - Korean Government through the Creative Research Center for Lattice Defectronics [NRF-2017R1A3B1023686]
  2. Center for Quantum Coherence in Condensed Matter [2016R1A5A1008184]
  3. NRF - Korean government (MSIT) [NRF2018R1A2B6008258]
  4. Fundamental Research Program of the Korea Institute of Materials Science (KIMS) [PNK6410]
  5. Global Frontier Hybrid Interface Materials of the National Research Foundation of Korea (NRF) - Ministry of Science and ICT [2013M3A6B1078872]
  6. POSTECH-Samsung Electronics Industry-Academia Cooperative Research Center

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The emergence of a domain wall property that is forbidden by symmetry in bulk can offer unforeseen opportunities for nanoscale low-dimensional functionalities in ferroic materials. Here, we report that the piezoelectric response is greatly enhanced in the ferroelastic domain walls of centrosymmetric tungsten trioxide thin films due to a large strain gradient of 10(6) m(-1), which exists over a rather wide width (similar to 20nm) of the wall. The interrelationship between the strain gradient, electric polarity, and the electromechanical property is scrutinized by detecting of the lattice distortion using atomic scale strain analysis, and also by detecting the depolarized electric field using differential phase contrast technique. We further demonstrate that the domain walls can be manipulated and aligned in specific directions deterministically using a scanning tip, which produces a surficial strain gradient. Our findings provide the comprehensive observation of a flexopiezoelectric phenomenon that is artificially controlled by externally induced strain gradients.

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