Journal
CURRENT APPLIED PHYSICS
Volume 16, Issue 2, Pages 141-144Publisher
ELSEVIER SCIENCE BV
DOI: 10.1016/j.cap.2015.11.006
Keywords
Nanopillar; Si; Antireflection; Mie resonance; Surface photovoltage
Funding
- Korea Institute of Energy Technology Evaluation and Planning Grant [KETEP-20133030011000]
- Quantum Metamaterials Research Center (QMMRC) through the National Research Foundation of Korea [2015001948]
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The surface photovoltage (SPV) characteristics of periodic nanopillar (NP) arrays formed on Si wafers were investigated. The NP arrays exhibited broadband omnidirectional antireflection effects with Mie resonance. Kelvin probe force microscopy (KPFM) revealed that the positive fixed charges in SiNx layers induced band bending at the Si surface and increased surface photovoltage (SPV) at the NP top surface. Estimated SPV values, determined by the amount of surface band bending, were similar in NPs and planar counterparts. This finding suggests that field effect passivation by the dielectric layer coating could help improve photovoltaic performance of nanostructure-based Si solar cells and that KPFM may be a useful tool for the investigation of surface electrical properties of Si nanostructures. (C) 2015 Elsevier B.V. All rights reserved.
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