Journal
SURFACE & COATINGS TECHNOLOGY
Volume 402, Issue -, Pages -Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.surfcoat.2020.126506
Keywords
Silicon nitride; PECVD; Low-temperature deposition
Funding
- Science and Technology Research program of Chongqing Education Commission of China [KJQN201900840]
- Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), Dalian University of Technology [KF2005]
- Chongqing Technology and Business University [KFJJ2019048]
- Innovation Group of New Technologies for Industrial Pollution Control of Chongqing Education Commission [CXQT19023]
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Low-temperature deposition of amorphous silicon nitride/oxynitride (a-SiNx/a-SiNxOy) is of significance for many industrial applications. In this work, low H-content a-SiNx/a-SiNxOy films were prepared at room tem-perature by a specially designed plasma enhanced chemical vapor deposition (PECVD) system using Ar-diluted SiH4 and pure N-2 as the reactant gases. The plasmas for the deposition of a-SiNx/a-SiNxOy films were studied as a function of discharge power and working pressure. It was found that the density of N atoms in plasma plume was found to have significant impacts on the compositions and optical properties of a-SiNx/a-SiNxOy films and the correlations between the plasma discharge and the as-deposited films were explored. With the increase of N atoms in the plasma, the growth rate of a-SiNx/a-SiNxOy films was increased and the refractive index was gradually reduced, and thus the value of refractive index at 633 nm was tuned from 2.20 to 1.64 due to the increase of the atomic ratio of N to Si in the films. In addition, the O and H contents were increased with the increase of N density in the plasma and have contributions to the variation in the refractive index of a-SiNxOy films as well. The low-temperature deposition of a-SiNx/a-SiNxOy films with tunable refractive index exhibited a great potential in practical applications, especially in flexible electronics.
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