The effect of Fe dopant on structural, optical properties of TiO2 thin films and electrical performance of TiO2 based photodiode

Herein, TiO2 heterojunctions were fabricated by sol gel spin coating technique as a function of Fe doping. The effect of Fe doping on the optical, structural, morphological properties of TiO2 thin films and electro-optical properties of their photodiode applications have been investigated. The XRD results have not showed peaks, which implies that the all films are amorphous. The E-g values of thin films decreased with increasing Fe concentration. As result of I - V measurements of diodes under dark and light conditions, all diodes demonstrated photo characteristic behavior. The barrier height values of diodes varied between 0.68 eV and 0.70 eV. The lowest ideality factor was obtained from 2% Fe: TiO2/p-Si diode and was found to be 4.75. The highest photosensitivity of 1.53 x 10(4) was obtained from 6% Fe: TiO2. In addition, the C - V, G - V and R-s - V measurement were taken at different frequencies and analyzed. Moreover, the obtained results showed that the performances of fabricated diodes could be governed by the Fe doping.