4.8 Article

Light-Controlled Near-Field Energy Transfer in Plasmonic Metasurface Coupled MoS2Monolayer

Journal

SMALL
Volume 16, Issue 40, Pages -

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.202003539

Keywords

energy transfer; MoS2; photoluminescence; plasmonic metasurfaces; two oscillators coupling

Funding

  1. National Key Research and Development Program of China [2017YFA0205700, 2017YFA0206000]
  2. National Natural Science Foundation of China [11674012, 61422501, 11374023, 61521004, 11904098]
  3. Foundation for the Author of National Excellent Doctoral Dissertation of P.R. China [201420]
  4. National Program for Support of Top-notch Young Professionals [W02070003]
  5. Natural Science Foundation of Hunan Province (CN) [2019JJ30004]

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The energy transfer from plasmonic nanostructures to semiconductors has been extensively studied to enhance light-harvesting and tailor light-matter interactions. In this study, the efficient energy transfer from an Au metasurface to monolayered MoS(2)within a near-field coupling regime is reported. The metasurface is designed and fabricated to demonstrate strong photoluminescence (PL) and cathodoluminescence (CL) emission spectra. In the coupled heterostructure of MoS(2)with a metasurface, both the Raman shift and absorption spectral intensities of monolayered MoS(2)are affected. The spectral profile and PL peak position can be tailored owing to the energy transfer between plasmonic nanostructures and semiconductors. This is confirmed by ultrafast lifetime measurement. A theoretical model of two coupled oscillators is proposed, where the expanded general solutions (EGS) of such a model result in a series of eigenvalues that correspond to the renormalization of energy levels in modulated MoS2. The model can predict the peak shift up to tens of nanometers in hybrid structures and hence provides an alternative method to describe energy transfer between metallic structures and two-dimensional (2D) semiconductors. A viable approach for studying light-matter interactions in 2D semiconductors via near-field energy transfer is presented, which may stimulate the applications of functional nanophotonic devices.

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