Journal
SMALL
Volume 16, Issue 41, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/smll.202003225
Keywords
all-inorganic halide perovskites; closed-loop pulse switching; conducting-bridge; lead-free halide perovskites; resistive switching memory
Categories
Funding
- Future Material Discovery Program through the National Research Foundation of Korea [2016M3D1A1027666]
- Basic Science Research Program through the National Research Foundation of Korea [2017R1A2B3009135]
- Nano Material Technology Development Program through the National Research Foundation of Korea [2016M3A7B4910]
- Basic Research Laboratory through the National Research Foundation of Korea [2018R1A4A1022647]
- International Energy Joint R&D Program of the Korea Institute of Energy Technology, Evaluation, and Planning [20168510011350]
- National Research Foundation of Korea [4120200513611, 4199990514635] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Organometallic and all-inorganic halide perovskites (HPs) have recently emerged as promising candidate materials for resistive switching (RS) nonvolatile memory due to their current-voltage hysteresis caused by fast ion migration. Lead-free and all-inorganic HPs have been researched for non-toxic and environmentally friendly RS memory devices. However, only HP-based devices with electrochemically active top electrode (TE) exhibit ultra-low operating voltages and high on/off ratio RS properties. The active TE easily reacts to halide ions in HP films, and the devices have a low device durability. Herein, RS memory devices based on an air-stable lead-free all-inorganic dual-phase HP (AgBi2I7-Cs3Bi2I9) are successfully fabricated with inert metal electrodes. The devices with Au TE show filamentary RS behavior by conducting-bridge involving Ag cations in HPs with ultra-low operating voltages (<0.15 V), high on/off ratio (>10(7)), multilevel data storage, and long retention times (>5 x 10(4)s). The use of a closed-loop pulse switching method improves reversible RS properties up to 10(3)cycles with high on/off ratio above 10(6). With an extremely small bending radius of 1 mm, the devices are operable with reasonable RS characteristics. This work provides a promising material strategy for lead-free all-inorganic HP-based nonvolatile memory devices for practical applications.
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