Journal
SEMICONDUCTORS
Volume 54, Issue 9, Pages 1069-1074Publisher
PLEIADES PUBLISHING INC
DOI: 10.1134/S1063782620090195
Keywords
subterahertz range; GaAs; InP; Fe; Si; absorption; dielectric-loss tangent
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Funding
- Russian Scientific Foundation [18-79-10112]
- Russian Science Foundation [19-79-30071]
- Russian Science Foundation [18-79-10112] Funding Source: Russian Science Foundation
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The results of experimental investigation into the dielectric losses in GaAs, InP:Fe, and Si semiconductor crystals in the millimeter wavelength range (80-260 GHz) using the original precise method of measuring the reflectance and dielectric-loss tangent tan delta based on open high-quality Fabry-Perot cavities are presented. It is shown that the losses in the frequency range from 100 to 260 GHz in ultrapure semiconductor single-crystal GaAs substrates are mainly determined by lattice absorption, while the main loss mechanism in single-crystal silicon is absorption by free carriers; herewith, tan delta approximate to (1-2) x 10(-4)even for a noticeable, at a level of 10(12)cm(-3), free carrier concentration. In contrast with GaAs and Si, tan delta in compensated InP:Fe crystals is almost independent of frequency in the range from 100 to 260 GHz, which is associated with the material conductivity and optimization of microwave semiconductor devices, in particular, frequency-multiplication devices and devices of the controlled emission output of continuous and pulsed gyrotrons.
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