Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume 35, Issue 12, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6641/abb71d
Keywords
gallium nitride; chemical vapor deposition; hexagonal boron nitride; nanocrystalline; ultraviolet photodetector
Categories
Funding
- National Key Research and Development Program of China [2018YFB0406702]
- Natural science foundation of Hunan province, China [2019JJ50751]
- Project of the State Key Laboratory of High-Performance Complex Manufacturing, Central South University, China [ZZYJKT2019-13, ZZYJKT2018-01, 218091, 217056]
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Chemical vapor deposition (CVD) technology is a simple and flexible method used to prepare high-quality crystalline materials. Traditional CVD technology, based on pre-deposited thin catalyst metal, usually produces nanostructures instead of continuous films. In this work, a continuous GaN film on a monolayer boron nitride (h-BN) insertion layer is demonstrated using CVD technology. The experimental results and theoretical calculations indicate that abundant GaN nanocrystallites are firstly formed at the edges or grain boundaries of the monolayer h-BN by quasi-van der Waals epitaxy. Then, the vapor-solid mechanism will control further growth of the GaN nanocrystallites, causing them to merge into a continuous GaN film. Meanwhile, the CVD-grown GaN ultraviolet detector exhibits a relatively high responsivity with a value of 0.57 A W-1 at 2 V. In this paper, a simple low-cost CVD method is proposed for preparing continuous films on two-dimensional materials for electronic and optoelectronic devices.
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