4.7 Article

X-ray irradiation-induced degradation in Hf0.5Zr0.5O2 fully depleted silicon-on-insulator n-type metal oxide semiconductor field-effect transistors

Journal

RARE METALS
Volume 40, Issue 11, Pages 3299-3307

Publisher

NONFERROUS METALS SOC CHINA
DOI: 10.1007/s12598-020-01586-z

Keywords

Total ionizing dose; Fully depleted silicon-on-insulator (FDSOI); Metal-oxide-semiconductor field-effect transistor (MOSFET); High-k; Hf0.5Zr0.5O2

Funding

  1. National Natural Science Foundation of China [61874135, 61904194, 11905287]
  2. National Major Project of Science and Technology of China [2017ZX02315001]
  3. Youth Innovation Promotion Association, CAS [Y9YQ01R004]
  4. Opening Project of Key Laboratory of Microelectronic Devices AMP
  5. Integrated Technology, Institute of Microelectronics, CAS [Y9YS05X002]

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In this study, the effects of X-ray radiation on n-type FDSOI MOSFETs with high-k dielectric were investigated. It was found that short-channel devices exhibited lower sensitivity to irradiation and showed a 38% increase in effective electron mobility after X-ray irradiation. Additionally, the degradation mechanism on X-ray irradiation was revealed through analysis of carrier mobility, gate length modulation, and S/D parasitic resistance.
The n-type ultrathin fully depleted silicon-on-insulator (FDSOI) metal-oxide-semiconductor field-effect transistors (MOSFETs), with a Hf(0.5)Zr(0.5)O(2)high dielectric permittivity (high-k) dielectric as gate insulator, were fabricated. The total ionizing dose effects were investigated, and an X-ray radiation dose up to 1500 krad(Si) was applied for both long- and short-channel devices. The short-channel devices (0.025-0.100 mu m) exhibited less irradiation sensitivity compared with the long-channel devices (0.35-16 mu m), leading to a 71% reduction in the irradiation-induced drain current growth and a 26% decrease in the shift of the threshold voltage. It was experimentally demonstrated that the OFF mode is the worst case among the three working conditions (OFF, ON and All0) for short-channel devices. Also, the determined effective electron mobility was enhanced by 38% after X-ray irradiation, attributed to the different compensations for charges triggered by radiation between the high-kdielectric and buried oxide. By extracting the carrier mobility, gate length modulation, and source/drain (S/D) parasitic resistance, the degradation mechanism on X-ray irradiation was revealed. Finally, the split capacitance-voltage measurements were used to validate the analysis.

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