Journal
CRYSTAL GROWTH & DESIGN
Volume 16, Issue 5, Pages 2509-2513Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.cgd.5b01244
Keywords
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Funding
- FIDEL ANR French Project [ANR-NANO-029 01]
- GANEX [ANR-11-LABX-0014]
- Region Auvergne
- European FEDER [CPER 2013]
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Selective area growth hydride vapor phase epitaxy (SAG-HVPE) and metal organic vapor phase epitaxy (MOVPE) processes are coupled for the synthesis of high quality c-axis InGaN/GaN core/shell structures. The core consists of high aspect ratio GaN rods grown by SAG-HVPE on patterned N-polar AIN on Si(100) substrates. The shell is grown by MOVPE which provides abrupt InGaN/GaN multiquantum wells (MQWs). Microphotoluminescence (At-PL) analysis performed on the HVPE GaN core exhibit a narrow emission line of 3 meV in line width associated with the neutral-donor bound exciton revealing the excellent optical properties of the GaN material. For the core/shell wire geometry, the silane free HVPE process ensured the whole lateral cladding of the core. The hybrid HVPE core/MOVPE shell structures exhibit high optical quality without yellow luminescence.
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