Plasma-Chemical Synthesis of Lead Sulphide Thin Films for Near-IR Photodetectors

Lead sulfide (PbS) thin films of different morphology were synthesized via direct interaction of lead and sulfur vapors. Low temperature nonequilibrium RF (40.68 MHz) plasma discharge at low pressure ((3-5) x 10(-3) Torr) was used for the initiation of chemical interaction between precursors in the gas phase. Thein-situOptical Emission Spectroscopy (OES) was utilized to determine the exited reactive species existing in plasma discharge and possible mechanism of plasma-chemical reactions resulting in the formation of the solid phase. The chemical composition, structure and morphology of the surface of theas-depositedmaterials in dependence of parameters of the plasma process such as stoichiometry of the precursors in the gas phase, power of the plasma discharge and substrate temperature were characterized by SEM, XRD and AFM analytical techniques. The optical properties and electrophysical parameters of the samples were studied as well.

Automated summary

Lead sulfide (PbS) thin films with different morphologies were synthesized through direct interaction of lead and sulfur vapors using low temperature nonequilibrium RF plasma discharge. In-situ Optical Emission Spectroscopy was used to investigate the reactive species in the plasma discharge and the mechanism of plasma-chemical reactions. The chemical composition, structure, and surface morphology of the deposited materials were characterized using SEM, XRD, and AFM, while the optical properties and electrophysical parameters of the samples were also studied.