Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 217, Issue 21, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.202000207
Keywords
chemical vapor deposition; diamond; p-i-n junctions; ultraviolet detectors
Funding
- National Natural Science Foundation of China [61605155, 61627812, 61705176, 61804122, 11474048]
- China Postdoctoral Science Foundation [2019M653637, 2019M660256]
- Dongguan Introduction Program of Leading Innovative and Entrepreneurial Talents
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A (001)-oriented single-crystal diamond p-i-n junction ultraviolet (UV) detector is fabricated and its optoelectronic properties are investigated. The detector exhibits a clear rectifyingI-Vcharacteristic with a rectification ratio of 223 at +/- 5 V. At a reverse bias of 5 V, the responsivity is 1.69 A W(-1)under an irradiation of 210 nm light, and the 210 nm/400 nm UV-to-visible rejection ratio reaches 10(3). The time response characteristic shows a long rise time and decay time, which are mainly caused by the carrier trapping in the n-type diamond layer.
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