Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume 217, Issue 21, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.202000319
Keywords
atomic layer deposition; piezoelectricity; thin films; zinc oxide
Funding
- European Research Council (ERC) under the European Union's Horizon 2020 research and innovation program [715403]
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Zinc oxide (ZnO) thin films are deposited by plasma-enhanced atomic layer deposition (PE-ALD). This deposition method allows depositing stoichiometric and highly resistive ZnO films at room temperature. Despite such important requirements for piezoelectricity being met, not much is known in literature about the piezoelectric properties of ZnO thin films (<70 nm) deposited by PE-ALD. The films are grown at different substrate temperatures to investigate the effect on crystalline and piezoelectric properties. Films deposited on flexible poly(ethylene terephthalate) (PET) generated a higher piezoelectric current (>1.8 nA) and charge (>80 pC) compared with films deposited on glass (>0.3 nA and >30 pC) due to bending effects of the substrate when mechanically excited. Furthermore, increasing the substrate temperature, during deposition, enhances the growth along the (002) crystallographic orientation, which further strengthens the generated piezoelectric current signal for mechanical excitations along the ZnO film'sc-axis.
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