4.4 Article

Efficient Electrical Transport Through Oxide-Mediated InP-on-Si Hybrid Interfaces Bonded at 300 °C

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssa.202000317

Keywords

electrical transports; semiconductors hybrid interfaces; 3D hybrid integration on silicon

Funding

  1. French RENATECH network

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This study investigates hybrid bonding of III-V materials on silicon for complementary metal-oxide semiconductor processing, demonstrating efficient electrical transport through oxide-mediated bonded interfaces. This approach opens up possibilities for full 3D design and operation of optoelectronic devices.
For complementary metal-oxide semiconductor processing compatibility, hybrid bonding of III-V materials on silicon should be operated below 300 degrees C, requiring an interfacial layer as thin as possible to not hamper the electrical transport through the interface. Both SiO(2)and ZnO interfacial layers are investigated in the case of n-InP/n-Si hybrid heterostructures. Efficient electrical transport through oxide-mediated bonded InP/Si heterostructures is demonstrated, related to tunneling through the oxide-interfacial layer. These electrically operated oxide-interfacial-layer heterostructures provide both efficient bonding processing and open the field for full 3D design and operation of optoelectronic devices.

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