Optical and electronic properties in amorphous BaSnO3 thin films

Wide-bandgap perovskite stannates are of interest for the emergent all-oxide transparent electronic devices due to their unparalleled room temperature electron mobility. Considering the advantage of amorphous material in integrating with non-semiconductor platforms, we herein reported the optical and electronic properties in the prototypical stannate, amorphous barium stannate (BaSnO3) thin films, which were deposited at room temperature and annealed at various temperatures. Despite remaining amorphous status, with increasing the annealing temperature, the defect level within amorphous BaSnO3 thin films could be suppressed. Accordingly, the optical band gap, the leakage current, and the breakdown electric field could be improved from 2.81 eV, 3.94 x 10(-6) A cm(-2) at 400 kV/cm, 1.43 MV/cm for the as-prepared BaSnO3 thin films to 2.90 eV, 6.17 x 10(-8) A cm(-2) at 400 kV/cm, 1.93 MV/cm for the 400 degrees C-annealed BaSnO3 thin films.

Automated summary

The study shows that annealing can improve the optical and electronic properties of amorphous BaSnO3 thin films, including reducing defect levels, increasing the optical band gap, decreasing leakage current, and enhancing the breakdown electric field.