4.5 Article

Discrete element method simulation of segregation pattern in a sinter cooler charging chute system

Journal

PARTICUOLOGY
Volume 59, Issue -, Pages 34-42

Publisher

ELSEVIER SCIENCE INC
DOI: 10.1016/j.partic.2020.08.004

Keywords

Discrete element method; Segregation; Sinter; Industrial application

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This study utilizes three-dimensional Discrete Element Method (DEM) to simulate material flows in the large-scale charging chute of Fos-Sur-Mer sinter cooler plant, resulting in segregation patterns at the charging exit. After suitable calibration tests, the simulation is in good agreement with experimental observations. It is found that a high filling ratio leads to less segregation at the charging chute exit.
This paper presents the simulation of material flows in the large-scale charging chute of Fos-Sur-Mer sinter cooler plant by using three-dimensional Discrete Element Method (DEM). As a result of granular flows in the chute, segregation patterns are formed at the charging exit. The sinter material is modelled as dry particles and their size distribution in the simulation is larger than in the reality to keep the simulation in a reasonable run time. Suitable calibration tests are performed to specify the DEM contact parameters in order to replicate the behavior observed during experiments with the virtual sinter particles. The DEM model is found to be in good agreement with a segregation measurement. A sensitivity analysis using different particle sizes shows that the segregation patterns are not affected by the different sizes used for fine particles. Furthermore, the filling ratio in the charging system is varied in the model and shows that a high filling ratio leads to less segregation when exiting the charging chute. The DEM model is used to analyze the granular flows in the charging chute, understand the material behavior and optimize the sinter cooling efficiency. (c) 2020 Chinese Society of Particuology and Institute of Process Engineering, Chinese Academy of Sciences. Published by Elsevier B.V. All rights reserved.

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