Rapid laser fabrication of Nickel oxide nanoparticles for UV detector

In the present work, silicon-based Nickel oxide heterojunction photodetectors was manufactured via two-step. First, the NiO was directly synthesised by laser ablation (Model Nd:YAG with a wavelength of 1064 nm) in the liquid approach of a pure Ni target typically with various number of pulses at constant laser energy. Second, the prepared NiO colloidal was then deposited on a silicon wafer surface by a dip-coating method. The impacts of laser pulses on the NiO particles properties were in briefly presented. The synthesis of NiO NPs with a good-nanocrystalline structure in deionized water was proved. The dominated shape of the NiO NPs was quasi-spherical and their concentration was observed to be affected by the laser conditions. FTIR spectral results proved the formation of Ni-O bonds at 526 cm(-1) and 507 cm(-1). The optical energy bandwidth decreases from 3.75 to 3.6 eV as the laser pulses increase. The introduction of the prepared NiO nanoparticles into silicon showed a well-performance for UV detection. The nanostructured NiO/Si heterojunction photodetector exhibited clear rectifying I-V behaviour in the dark condition and showed prominent photovoltaic properties under illumination. The contrast ratio of the fabricated detector increases with an increasing number of laser pulses. It demonstrated a maximum value of the responsivity and detectivity 0.7 A/W, 63 x 10(12) cm. Hz(1/2).W-1, respectively under 330 nm UV light illumination.