Journal
OPTICS EXPRESS
Volume 28, Issue 20, Pages 30299-30308Publisher
OPTICAL SOC AMER
DOI: 10.1364/OE.403906
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Funding
- Foundation for Polish Science
- European Union under the European Regional Development Fund [POIR.04.04.00-00-210C/16-00, POIR.04.04.00-00-5D5B/18-00]
- Polish National Centre for Research and Development [LIDER/29/0185/L-7/15/NCBR/2016]
- Narodowe Centrum Nauki [2015/17/B/ST7/04091, UMO-2018/31/B/ST5/03719, UMO-2019/35/N/ST7/04182]
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A novel approach to fabricate efficient nitride light-emitting diodes (LEDs) grown on gallium polar surface operating at cryogenic temperatures is presented. We investigate and compare LEDs with standard construction with structures where p-n junction field is inverted through the use of bottom tunnel junction (BTJ). BTJ LEDs show improved turn on voltage, reduced parasitic recombination and increased quantum efficiency at cryogenic temperatures. This is achieved by moving to low resistivity n-type contacts and nitrogen polar-like built-in field with respect to current flow. It inhibits the electron overflow past quantum wells and improves hole injection even at T=12K. Therefore, as cryogenic light sources, BTJ LEDs offer significantly enhanced performance over standard LEDs. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
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