Journal
OPTICAL MATERIALS
Volume 108, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.optmat.2020.110145
Keywords
Physical vapor deposition; Epitaxial growth; Thin films; Structural
Categories
Funding
- National Natural Science Foundation of China [51972283, 91833301]
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((2) over bar 01) oriented Si-doped beta-Ga2O3 films were grown on (0001) sapphire substrates with different SiO2 content in the targets by pulsed laser deposition (PLD). A carrier density of 8.3 x 10(18) cm(-3) and a Hall mobility of 0.07 cm(2) V(1)s(1) have been observed for film grown with 1.5 wt % SiO2 content in the target. Optical transmission spectra show that all the films have high visible region transmittance. Our work shows that PLD is an effective technique for growing conductive Si-doped beta-Ga2O3 films.
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