Simulating the effect of adding BSF layers on Cu2BaSnSSe3 thin film solar

this paper, the device characteristics of Cu2BaSnSSe3 (CBT(S,Se-3)) solar cells have been simulated using SCAPS-1D. The simulated results have been validated by comparison with the experimental data reported in the literature. For improving the cell performance and boosting the efficiency, adding different Back Surface Field (BSF) layers is suggested on the absorber layer. Inserting a BSF layer with optimum parameters causes enhancement of open-circuit voltage (V-OC), in particular, causes better efficiency on the cell's performance. For this purpose, we optimize the MoSe2 layer, which is formed at the interface between CBT(S,Se-3) absorber layer and Mo back contact. Investigation of MoSe2 helps us to represent optimum ranges for bandgap (E-g), electron affinity (chi), charge carrier density, thickness, the mobility of electron and hole (mu(e) and mu(h)) and the effective density of states of conduction band and valence band (N-C and N-V) of a material to choose as a BSF layer which can be inserted in CBT(S,Se-3) solar cells and other types of cells like CZTSSe, perovskite and CIGS. Based on the optimum parameters for an appropriate BSF layer, Cu2BaSnSSe3 solar cell has been simulated by inserting SnS as BSF layer, and the results indicated improvement in the cell's parameters. We recorded PCE = 7.31%, V-OC = 0.867 V, J(SC) = 16.986 mA/cm(2), and FF = 49.63%.