Journal
NANOTECHNOLOGY
Volume 31, Issue 50, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/abb559
Keywords
quantum; qubits; fabrication; silicon; nanofabrication; silicon-germanium
Funding
- Army Research Office (ARO) [W911NF-17-1-0274]
- Vannevar Bush Faculty Fellowship program under ONR [N00014-15-1-0029]
- NSF through the UW-Madison MRSEC [DMR-1720415]
- NSF MRI program [DMR-1625348]
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We present an improved fabrication process for overlapping aluminum gate quantum dot devices on Si/SiGe heterostructures that incorporates low-temperature inter-gate oxidation, thermal annealing of gate oxide, on-chip electrostatic discharge (ESD) protection and an optimized interconnect process for thermal budget considerations. This process reduces gate-to-gate leakage, damage from ESD, dewetting of aluminum and formation of undesired alloys in device interconnects. Additionally, cross-sectional scanning transmission electron microscopy (STEM) images elucidate gate electrode morphology in the active region as device geometry is varied. We show that overlapping aluminum gate layers homogeneously conform to the topology beneath them, independent of gate geometry and identify critical dimensions in the gate geometry where pattern transfer becomes non-ideal, causing device failure.
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