Journal
NANOTECHNOLOGY
Volume 31, Issue 50, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/abb504
Keywords
heterostructure; thermal conductivity; interfacial thermal resistance; strain effect; anisotropy
Funding
- National Nature Science Foundation of China [E51675420]
- Fundamental Research Funds for the Central Universities [xzd012019020]
- Shaanxi Provincial Key Research and Development Program [2019GY-121]
Ask authors/readers for more resources
This article reports the thermal conduction properties of Si/a-SiO(2)heterostructure with two different interfaces: weak and strong coupling strength through molecular dynamics simulation. The size and temperature dependencies on the interfacial thermal resistance of the weak coupling interface are larger than those of the strong coupling interface. The thermal conduction in Si/a-SiO(2)shows strong anisotropy. The thermal conductivity, interfacial thermal resistance, and enhancement of the anisotropy can be modulated by changing the strains applied to the heterostructures. This work provides an optional way to design the silicon-based heterostructures considering heat insulation and heat dissipation.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available