Journal
NANOTECHNOLOGY
Volume 31, Issue 50, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/abb505
Keywords
memristor; SiOx; charge transport mechanism; electronic structure
Funding
- Russian Science Foundation [19-19-00286]
- Ministry of Science and Technology (MOST) of Taiwan [107-2923-E-009-001-MY3]
- Russian Science Foundation [18-49-08001] Funding Source: Russian Science Foundation
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THe memristor is a key memory element for neuromorphic electronics and new generation flash memories. One of the most promising materials for memristor technology is silicon oxide SiOx, which is compatible with silicon-based technology. In this paper, the electronic structure and charge transport mechanism in a forming-free SiOx-based memristor fabricated with the plasma enhanced chemical vapor deposition method is investigated. The experimental current-voltage characteristics measured at different temperatures in high-resistance, low-resistance and intermediate states are compared with various charge transport theories. The charge transport in all states is limited by the space charge-limited current model. The trap parameters, responsible for the charge transport in a SiOx-based memristor in different states, are determined.
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