Journal
NANOTECHNOLOGY
Volume 31, Issue 50, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/abb506
Keywords
nanowires; molecular beam epitaxy (MBE); Te-doping; near-infrared ensemble photodetector; field emission; low-frequency noise spectroscopy; generation-recombination noise
Funding
- Air Force Office of Scientific Research (AFOSR) [W911NF1910002]
- National Science Foundation [ECCS-1832117, ECCS-1542174, ECCS-1542015]
- State of North Carolina
- U.S. Department of Defense (DOD) [W911NF1910002] Funding Source: U.S. Department of Defense (DOD)
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This work reports a comprehensive investigation of the effect of gallium telluride (GaTe) cell temperature variation (T-GaTe) on the morphological, optical, and electrical properties of doped-GaAsSb nanowires (NWs) grown by Ga-assisted molecular beam epitaxy (MBE). These studies led to an optimum doping temperature of 550 degrees C for the growth of tellurium (Te)-doped GaAsSb NWs with the best optoelectronic and structural properties. Te incorporation resulted in a decrease in the aspect ratio of the NWs causing an increase in the Raman longitudinal optical/transverse optical vibrational mode intensity ratio, large photoluminescence emission with an exponential decay tail on the high energy side, promoting tunnel-assisted current conduction in ensemble NWs and significant photocurrent enhancement in the single nanowire. A Schottky barrier photodetector (PD) using Te-doped ensemble NWs with broad spectral range and a longer wavelength cutoff at similar to 1.2 mu m was demonstrated. These PDs exhibited responsivity in the range of 580-620 A W(-1)and detectivity of 1.2-3.8 x 10(12)Jones. The doped GaAsSb NWs have the potential for further improvement, paving the path for high-performance near-infrared (NIR) photodetection applications.
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