Journal
NANO RESEARCH
Volume 14, Issue 6, Pages 1598-1608Publisher
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-020-3019-y
Keywords
monolayer MoS2; epitaxy; domain size; domain alignment; heterostructures
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Funding
- National Natural Science Foundation of China [11834017, 61888102]
- National Key Research and Development Program of China [2016YFA0300904]
- Key Research Program of Frontier Sciences of CAS [QYZDB-SSW-SLH004]
- Strategic Priority Research Program of CAS [XDB30302000, XDB33010300]
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Monolayer MoS(2) as an emerging 2D semiconductor material has various promising applications. Epitaxy is a promising technique for producing high-quality, large-area MoS(2) with controllable properties. Future research will focus on large-scale films with large domain sizes and high domain alignments.
As an emerging two-dimensional (2D) semiconductor material, monolayer MoS(2)has recently attracted considerable attention. Various promising applications of this material have been proposed for electronics, optoelectronics, sensing, catalysis, energy storage, and so on. To realize these practical applications, high-quality and large-area MoS(2)with controllable properties is required. Among the many different synthesis techniques, epitaxy provides a promising route for producing MoS(2)monolayers. Here, we review the epitaxial growth of monolayer MoS(2)on various substrates, with a particular focus on large-scale films with large domain sizes and high domain alignments. Finally, we offer perspectives and challenges for future research and applications of this technology.
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