Journal
NANO RESEARCH
Volume 14, Issue 6, Pages 1668-1681Publisher
TSINGHUA UNIV PRESS
DOI: 10.1007/s12274-020-3013-4
Keywords
substitutional doping; transition metal dichalcogenide; two-dimensional semiconductor; acceptor; donor
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Funding
- Ministry of Education (MOE), Singapore, under AcRF Tier 3 [MOE2018-T3-1-005]
- Singapore National Research Foundation
- MOE's AcRF Tier 1 [R-284-000179-133]
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This review summarizes recent progress in doping methods and understanding of doping effects in two-dimensional van der Waals transition metal dichalcogenides, showing that a variety of elements can act as either n-type or p-type dopants in these materials.
Two-dimensional (2D) van der Waals transition metal dichalcogenides (TMDs) are a new class of electronic materials offering tremendous opportunities for advanced technologies and fundamental studies. Similar to conventional semiconductors, substitutional doping is key to tailoring their electronic properties and enabling their device applications. Here, we review recent progress in doping methods and understanding of doping effects in group 6 TMDs (MX2, M = Mo, W; X = S, Se, Te), which are the most widely studied model 2D semiconductor system. Experimental and theoretical studies have shown that a number of different elements can substitute either M or X atoms in these materials and act as n- or p-type dopants. This review will survey the impact of substitutional doping on the electrical and optical properties of these materials, discuss open questions, and provide an outlook for further studies.
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