Journal
NANO LETTERS
Volume 20, Issue 10, Pages 7793-7801Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.0c03548
Keywords
synaptic consolidation; artificial synapse; neuromorphic computing; single-crystal indium phosphide
Categories
Funding
- USC Provost Graduate Fellowship
- USC Annenberg Endowed Graduate Fellowship
- National Science Foundation [1610604]
- Semiconductor Research Corporation [1571721]
- NASA JPL
- USC
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1610604] Funding Source: National Science Foundation
Ask authors/readers for more resources
As one of the key neuronal activities associated with memory in the human brain, memory consolidation is the process of the transition of short-term memory (STM) to long-term memory (LTM), which transforms an external stimulus to permanently stored information. Here, we report the emulation of this complex synaptic function, consolidation of STM to LTM, in a single-crystal indium phosphide (InP) field effect transistor (FET)-based artificial synapse. This behavior is achieved via the dielectric band and charge trap lifetime engineering in a dielectric gate heterostructure of aluminum oxide and titanium oxide. We analyze the behavior of these complex synaptic functions by engineering a variety of action potential parameters, and the devices exhibit good endurance, long retention time (>10(5) s), and high uniformity. Uniquely, this approach utilizes growth and device fabrication techniques which are scalable and back-end CMOS compatible, making this InP synaptic device a potential building block for neuromorphic computing.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available