Characterization of the photothermal interaction due to ramp-type heat on a semiconducting two-dimensional solid cylinder based on the Lord-Shulman model by using double Laplace transform

This article deals with a new model of photothermoelastic and semiconducting two-dimensional solid cylinder in the context of Lord-Shulman's theory of thermoelasticity. The surface of the cylinder has been loaded by ramp-type heat. The double Laplace transform has been applied, and its inversions have been calculated by using the Tzou method. The numerical results for the carrier density increment, temperatures increment, strain, stress, and stress-strain energy have been represented graphically. The ramp-time heat parameter, relaxation time parameter, and cylindrical axis length significantly affect all the studied functions. The ramp-time heat parameter controls the energy generated through the semiconducting materials.

Automated summary

This article presents a new model of photothermoelastic and semiconducting two-dimensional solid cylinder, applying ramp-type heat load. The numerical results depict the effects of ramp-time heat parameter, relaxation time parameter, and cylindrical axis length on various functions.