Journal
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume 142, Issue 38, Pages 16276-16284Publisher
AMER CHEMICAL SOC
DOI: 10.1021/jacs.0c05691
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Funding
- National Natural Science Foundation of China [21971172, 21671141, 51971245]
- 973 Program-The National Basic Research Program of China Special Funds for the Chief Young Scientist [2015CB358600]
- Priority Academic Program Development (PAPD) of Jiangsu Higher Education Institutions for Optical Engineering
- Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering (Changzhou University)
- Beijing Natural Science Foundation of China-Haidian Special Project [L182065]
- Beijing Natural Science Foundation [2202046]
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Controllable nucleation sites play a key role in the selective growth of heterostructures. Here, we are the first to report a one-pot strategy to realize the confined and selective growth of large MoS2/WS2 lateral and vertical heterostructures. A hydroxide-assisted process is introduced to control the nucleation sites, thereby realizing the optional formation of lateral and vertical heterostructures. Time-of-flight secondary ion mass spectrometry verifies the critical role of hydroxide groups toward the controllable growth of these heterostructures. The size of the as-grown MoS2/WS2 lateral heterostructures can be as large as 1 mm, which is the largest lateral size reported thus far. The obtained MoS2/WS2 heterostructures have a high carrier mobility of similar to 58 cm(2) V-1 s(-1), and the maximum on/off current ratio is >10(8). This approach provides not only a pathway for the selective growth of large MoS2/WS2 lateral and vertical heterostructures but also a fundamental understanding of surface chemistry for controlling the selective growth of transition-metal dichalcogenide heterostructures.
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