Switchable Asymmetric Moire Patterns with Strongly Localized States

Most moire pattern structures are constructed by twisting the angle of two similar 2D materials. The corresponding electronic structures are fixed in device applications. Here we study moire patterns constructed with monolayers of InSe and ferroelectric In2Se3. The ferroelectricity of In2Se3 induces deep electron trap states and allows the switch of moire pattern by an applied electric field. Using a unique linear scaling computational method, we systematically studied the electronic structures, localized state sizes, and strong correlation effects of switchable moire patterns of systems containing close to 10 000 atoms.