Journal
JOURNAL OF APPLIED PHYSICS
Volume 128, Issue 6, Pages -Publisher
AIP Publishing
DOI: 10.1063/5.0014717
Keywords
-
Categories
Funding
- Ministry of Education, Culture, Sports, Science and Technology (MEXT), Japan, through its Program for research and development of next-generation semiconductor to realize energy-saving society [JPJ005357]
Ask authors/readers for more resources
Efficient acceptor activation in gallium nitride (GaN) achieved through Mg ion-implantation depends mainly on the concentration of implanted Mg ions and the post-implantation annealing process. In this study, we conducted correlative scanning transmission electron microscopy, atom probe tomography, and cathodoluminescence (CL) measurements on Mg-implanted GaN layers with the implanted concentration ranging from 1x10(17) cm(-3) to 1x10(19) cm(-3). It was found that at the implanted concentration of similar to 1x10(18) cm(-3), Mg atoms were randomly distributed with defects likely to be vacancy clusters whereas at the implanted concentration of similar to 1x10(19) cm(-3), Mg-enriched clusters and dislocation loops were formed. From the CL measurements, the donor-acceptor pair (DAP) emissions from the implanted and un-implanted regions are obtained and then compared to analyze Mg activation in these regions. In the sample with Mg similar to 1x10(19) cm(-3), the existence of Mg-enriched clusters and dislocations in the implanted region leads to a weaker DAP emission, whereas the absence of Mg-enriched clusters and dislocations in the sample with Mg similar to 1x10(18)cm(-3) resulted in a relatively stronger DAP emission.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available