High performance solar-blind UV detector based on beta-Ga2O3/GaN nanowires heterojunction

Gallium nitride nanowires and beta-Ga2O3 nanowires were prepared by chemical vapor deposition. A solar-blind ultraviolet detector was fabricated based on beta-Ga2O3/GaN nanowires heterojunction. The UV detector exhibits excellent response properties to deep ultraviolet with wavelength of 254 nm. The device exhibits a photo-to-dark current ratio of 1.375 x 10(3) and a high detectivity of 1.2 x 10(11) Jones at 10 V bias Therefore, the responsivity of the UV detector is 27.5 mA/W under 254 nm ultraviolet light (8 mW/cm(2)) at 10 V bias voltage. The detector also has the advantages of easy preparation, low dark current, high rejection ratio, fast response, good stability and repeatability. The design method of beta-Ga2O3/GaN nanowires heterojunction has the advantages of novelty and simplicity, which provides a new approach to fabricate a heterojunction detector. (C) 2020 Published by Elsevier B.V.

Automated summary

Gallium nitride nanowires and beta-Ga2O3 nanowires were prepared using chemical vapor deposition to fabricate a solar-blind ultraviolet detector. The detector shows excellent response to deep ultraviolet light with high detectivity and stability, making it a promising device for UV detection applications.