Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 863, Issue -, Pages -Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2020.157702
Keywords
Thin film; Magnetoelectric coupling; Ferroelectric properties; Magnetic properties
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The lead-free (BZT-0.5BCT)/CFO/(BZT-0.5BCT) trilayer thin film with strong ME coupling at room temperature exhibited excellent dielectric and magnetoelectric properties.
Magnetoelectric (ME) heterostructures with strong ME coupling at room temperature are of great importance due to their promising applications in next-generation devices. Here, lead-free [Ba(Zr0.2Ti0.8) O-3-0.5(Ba0.7Ca0.3)TiO3]/CoFe2O4/[Ba(Zr0.2Ti0.8)O-3-0.5(Ba0.7Ca0.3)TiO3] (abbreviated as (BZT-0.5BCT)/CFO/ (BZT-0.5BCT)) trilayer thin film has been deposited on Pt/Ti/SiO2/Si (100) substrate by pulsed laser deposition technique. Dielectric properties of trilayer thin film show the relaxor behavior and high value of dielectric constant (similar to 2.2 x 10(3)) with low dielectric loss (similar to 0.16) at frequency 100 Hz at room temperature. Typical ferroelectric and magnetic hysteresis loops were found with large electric polarizations (P-s = 12.14 mu C/cm(2), Pr = 6.0 mu C/cm(2)) and magnetization (M-s = 246 emu/cc and M-r 1/4 66.6 emu/cc), respectively. The change in PE loop on the application of magnetic field represents the strong ME coupling. The high value of ME coefficient (alpha(ME)similar to 0.74 V/cm.Oe) was detected at room temperature which indicates its potential application for multifunctional ME devices. (C) 2020 Elsevier B.V. All rights reserved.
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