4.7 Article

Enhanced thermoelectric performance of orientated and defected SnTe

Journal

JOURNAL OF ALLOYS AND COMPOUNDS
Volume 858, Issue -, Pages -

Publisher

ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2020.157634

Keywords

Tin telluride; Hot deformation; Orientation; Dense dislocations; Phonon scattering

Funding

  1. National Natural Science Foundation of China [51572098, 51632006, 51772109]
  2. National Basic Research Program of China [2013CB632500]
  3. Natural Science Foundation of Hubei Province of Grant [2015CFB432]
  4. Open Fund of State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology [2016-KF-5]
  5. Huazhong University of Science and Technology of Grand [2019ygscxcy032]
  6. Graduates' Innovation Fund

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The alternative route of hot deformation process has shown a significant enhancement in the thermoelectric performance of SnTe by inducing special orientation and high density lattice defects, leading to a potential increase in ZT values.
Enhancing the thermoelectric performance of SnTe lies in the core of research, which has inspired effective and novel approaches such as point defects, electronic band structure engineering and nano-structuring. Herein, we propose an alternative route to enhance the thermoelectric performance of SnTe through a top-down hot deformation (HD) process. The HD induces a special orientation in the rock-salt SnTe, which is exclusive to layered structure materials and seldom achieved in cubic structure materials. In addition, the HD creates high density lattice defects such as dislocations and strain fluctuations in SnTe, a highly desired microstructure feature for low lattice thermal conductivity. As a result, the HD enables similar to 45% and similar to 58% enhancement in the maximum figure of merit ZT along the in-plane and cross-plane directions of SnTe. Such significant enhancement indicates great potential for the HD in enhancing the ZT of SnTe, which is extendable to other thermoelectric materials. (C) 2020 Elsevier B.V. All rights reserved.

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