Journal
JOURNAL OF ALLOYS AND COMPOUNDS
Volume 861, Issue -, Pages -Publisher
ELSEVIER SCIENCE SA
DOI: 10.1016/j.jallcom.2020.157589
Keywords
III-nitride; Multiple-quantum-well; Nanostructure patterning; Carrier localization; Strain relaxation
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Funding
- National Key Research and Development Program of China [2016YFB0400802]
- National Natural Science Foundation of China [61974149, 61704176]
- Key Research and Development Program of Zhejiang Province [2019C01080, 2020C01145]
- Ningbo Innovation 2025 Major Project [2018B10088, 2019B10121]
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This study reports a significantly boosted defect-insensitive ultraviolet emission from InGaN/GaN multiple quantum wells grown on patterned AlN nucleation layer compared to samples grown on uniform nucleation layer. Carrier localization is clearly illustrated for MQWs grown on patterned AlN NL as evidenced by temperature-dependent photoluminescence characterization. The underlying mechanism for the carrier localization is demonstrated to be correlated with partial relaxation of compressive strains inside epitaxial thin films.
In this work, we report a significantly boosted defect-insensitive ultraviolet emission from InGaN/GaN multiple quantum wells (MQWs) grown on patterned AlN nucleation layer (NL) compared to samples grown on uniform NL. Carrier localization is clearly illustrated for MQWs grown on patterned AlN NL as evidenced by an S-shape profile from temperature-dependent photoluminescence characterization. The underlying mechanism for the carrier localization is demonstrated to correlate with partial relaxation of compressive strains inside epitaxial thin films. This work illustrates that carrier localization can be achieved in MQWs with very low indium content by the adoption of patterned NL during growth, and provides a promising route towards the realization of high-efficiency ultraviolet emitter. (C) 2020 Published by Elsevier B.V.
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