Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 59, Issue 11, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.35848/1347-4065/abbc57
Keywords
Ga2O3; HVPE; Oxide semiconductor
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Funding
- Innovative Science and Technology Initiative for Security [JPJ004596]
- ATLA, Japan
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Vapor phase growth ofc-plane kappa-Ga2O3 films has been reported on various substrates such as sapphire, GaN, and AlN. However, these films are not single crystalline, but rather a mixture of nanometer-sized in-plane 120 degrees rotational domains. We demonstrate a technique that solves the in-plane rotational domain problem. kappa-Ga2O3 was grown by epitaxial lateral overgrowth. A SiO(x)mask with a striped or dotted-striped pattern was aligned on ac-plane sapphire substrate with a TiOx buffer layer so that the stripe was parallel to the [112 over bar 0 kappa-Ga2O3 was then grown on the substrate by halide vapor phase epitaxy. Electron backscatter diffraction, X-ray diffraction, transmission electron microscopy, and selective area electron diffraction revealed that the three in-plane orientations of the kappa-Ga2O3 domains converged into one whose [010] direction was perpendicular to the stripe. The convergence occurred through a geometrical natural selection mechanism.
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