Journal
INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING
Volume 30, Issue 12, Pages -Publisher
WILEY
DOI: 10.1002/mmce.22434
Keywords
ambient temperature; curve fitting; GaN HEMT; small signal model
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In this article, ambient temperature effect on small signal model of AlGaN/GaN HEMT has been explored. Based on the study, an analytical method to understand the ambient temperature dependence on device behavior has been developed. Effectiveness of the proposed method has been illustrated through comparison with measured data. Moreover, comparison with other analytical methods has also been carried out illustrating its acceptability threshold.
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