Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 67, Issue 10, Pages 4010-4020Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2020.3010471
Keywords
Silicon carbide; Photonic band gap; Silicon; MOS devices; Gallium nitride; Logic gates; Diamond; AlN; complementary metal-oxide-semiconductor-based design (CMOS); diamond; GaN; SiC; wide bandgap
Funding
- Intel Corporation
- Air Force Office of Scientific Research [FA9550-17-1-0048]
- Semiconductor Research Corporation (SRC)
- DARPA under the JUMP ComSenter program
- NSF [NNCI-1542081, 1710298, 1534303]
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Power and RF electronics applications have spurred massive investment into a range of wide and ultrawide bandgap semiconductor devices which can switch large currents and voltages rapidly with low losses. However, the end systems using these devices are often limited by the parasitics of integrating and driving these chips from the silicon complementary metal-oxide-semiconductor-based design (CMOS) circuitry necessary for complex control logic. For that reason, implementation of CMOS logic directly in the wide bandgap platform has become a way for each maturing material to compete. This review examines potential CMOS monolithic and hybrid approaches in a variety of wide bandgap materials.
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