Impact of AlInN Back-Barrier Over AlGaN/GaN MOS-HEMT With HfO2 Dielectric Using Cubic Spline Interpolation Technique

The dc characteristics of AlGaN/gallium nitride (GaN) metal-oxide-semiconductor-high electron mobility transistor (MOS-HEMT) with an AlInN back-barrier layer has been studied here. An analytical model is proposed for evaluating the charge density (sigma(tot)), carrier concentration (n(S)), drain current (I-D), and transconductance (g(m)) of the device by incorporating Hafnium oxide (HfO2) as a high-k dielectric layer. The charges created between the oxide and the AlGaN barrier layer influence the enhancement of carrier concentration of up to 6.2 x 10(13) cm(-2), at the two-dimensional electron gas (2DEG). The AlInN back-barrier increases the conduction band (CB) level of the GaN buffer and eliminates the confinement problems near the channel. By deriving the mathematical dependence of these parameters, this device demonstrated a positive threshold shift and a high current drive of 880 mA/mm. Cubic spline interpolation (CSI) technique is employed here to model the parameters in a more precise manner. The outcomes are evidence that the device could be a potential solution for high power switching as well as microwave applications.