Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 67, Issue 9, Pages 3598-3604Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2020.3009956
Keywords
Ferroelectric; history effect; in situ training; minor loop; neural network; synaptic device
Funding
- Applications and Systems Driven Center for Energy-Efficient Integrated Nanotechnologies (ASCENT), one of the six Semiconductor Research Corporation/Defense Advanced Research Projects Agency (SRC/DARPA) Joint University Microelectronics Program (JUMP) Cente
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Doped HfO2-based ferroelectric field-effect transistor (FeFET) is being actively explored as an emerging nonvolatile memory device with the potential for in-memory computing. In this work, we identify a new challenge of ferroelectric partial switching, namely history effect in minor loop dynamics. We experimentally demonstrate the minor loop dynamics in both ferroelectric capacitor (FeCap) and 28-nm FeFET in Part I. In this article, a physics-based phase-field multidomain switching model is used to understand the origin. Even though the device may have the same polarization state that is externally observable, its internal domain configuration varies depending on its history. We model such history effect into the FeFET-based neural network simulation and analyze its negative impact on the training accuracy and then propose a possible mitigation strategy.
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