Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 67, Issue 9, Pages 3516-3521Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2020.3009174
Keywords
Diamond:H; nanocontacts; ohmic contacts
Funding
- U.S. Army Research Office [W911NF-13-D-0001]
- U.S.-Israel Bilateral Science Foundation [2014506]
- Div Of Information & Intelligent Systems
- Direct For Computer & Info Scie & Enginr [2014506] Funding Source: National Science Foundation
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A major challenge facing diamond electronics is creating reliable and stable ohmic contacts to a hydrogen-terminated diamond (D:H) conducting surface. In this work, we explore a novel contact-first approach for creating refractory, scalable, and self-aligned ohmic contacts to D:H. Our contacts are based on W sputtered on O-terminated diamond followed by surface hydrogenation. We show that the H-plasma treatment provides a suitable thermal step to create the ohmic contact that relies on the formation of WC at the diamond surface. This thermal step also causes an order of magnitude increase in the W sheet resistance though the metallization that remains mechanically stable. The best contact resistance obtained in this work is 2.6 Omega-mm. We further demonstrate that the electrical contact takes place exclusively at the edge of the metal.
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