Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 67, Issue 10, Pages 4274-4280Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2020.3014271
Keywords
Conductive filament (CF); electrical SET; light RESET; optical response; photograph sensing; resistive random access memory
Funding
- SingaporeMinistry of Education [MOE2016-T2-1-102, MOE2016-T2-2-102]
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Photograph response in transparent devices has been a hot area of investigation, with several material systems being used to generate a response to illumination. In this study, we propose an ITO/MgO/HfO2/ITO bilayer (BL) transparent resistive switching (RS) device that exhibits a photograph response through defect engineering in the switching layer, which resulted in a subsurface active RS location in the formed conductive filament, thus reducing the loss of oxygen through the polycrystalline electrode. We observe that the switching performance is enhanced in the ITO/MgO/HfO2/ITO BL device as compared to the ITO/HfO2/ITO single-layer device with the insertion of MgO layer between the ITO top electrode and HfO2 RS layer. The device shows excellent ON/ OFF ratio (similar to 10(7)), high and stable dc electrical set and optical reset endurance (>1000 cycles without degradation), excellent retention (>10(4) s at 85 degrees C), high transparency (>85% transmittance in the visible spectrum), and a response time of 30 mu s for the optical reset. This study lays the foundation for future work involving oxide defect-based optical functionalization in RS devices with the possibility for being used in photograph sensing.
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