4.6 Article

C-Band Frequency-Tunable Rectifier Designed by HySIC Concept Utilizing GaAs MMIC and Si RFIC

Journal

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS
Volume 30, Issue 10, Pages 997-1000

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LMWC.2020.3020083

Keywords

C-band; frequency tuning; integrated circuit; microwave power transmission (MPT); rectifier; varactor

Funding

  1. Japan Society for the Promotion of Science (JSPS) KAKENHI [JP16K18106]
  2. Murata Science Foundation
  3. Cooperative Research Project Program of the Research Institute of Electrical Communication, Tohoku University

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In this letter, a frequency-tunable rectifier in the C-band designed by a hybrid semiconductor integrated circuit (HySIC) concept is proposed. A GaAs monolithic microwave integrated circuit (MMIC) and a Si radio frequency integrated circuit (RFIC) were utilized as the HySIC configuration in the rectifier design. For the purpose of initial confirmation of this design validity, the GaAs and Si chips were fabricated and packaged onto the copper tungsten plate with gold plating. As measured results, frequency-tunable range from 3.82 to 4.55 GHz was measured. Maximum radio frequency (RF)-direct current (dc) conversion efficiency and output dc power in the measured power range from -10.0 to 17.8 dBm were 28.7% and 17.3 mW, respectively.

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