Journal
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
Volume 26, Issue 5, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JSTQE.2020.2976562
Keywords
Electrooptical waveguides; Optical device fabrication; Silicon; Optical modulation; Electrodes; Mid-infrared photonics; integrated photonics; electro-optic modulator; barium titanate
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Funding
- Texas AAMP
- M University (TAMU) President's Excellence X-Grants
- Texas AAMP
- M Engineering Experiment Station (TEES) Seed Grant
- NSF-ERC PATHS-UP Program
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Mid-Infrared (mid-IR) electro-optical (E-O) modulators are critical components in developing broadband optical communication since present E-O modulators were mainly operated in the near Infrared (NIR) range. Meanwhile, the conventional ferroelectric E-O material - lithium niobate (LiNbO3 or LN) has lower Pockels effect comparing to barium titanate (BaTiO3 or BTO). This work demonstrated an E-O modulator in the mid-IR region applying a BTO substrate with low-loss titanium dioxide (TiO2) waveguides. The TiO2 waveguide device was first fabricated on a Si wafer by the complementary metal-oxide-semiconductor (CMOS) fabrication process. A fundamental waveguide mode was observed at lambda = 2.5-02.7 mu m, and an optical loss of 2.33 dB/cm was obtained. To achieve an efficient E-O modulation, the TiO2 waveguide was bonded with a <001> BaTiO3 single crystalline wafer that has a strong Pockels effect. The measured E-O coefficient gamma(eff) at lambda = 2.6 mu m was 119.7pm/V, which is five times higher than the conventional LiNbO3 modulators, and a large modulation depth of 8.45 dB was accomplished.
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