Journal
IEEE JOURNAL OF QUANTUM ELECTRONICS
Volume 56, Issue 5, Pages -Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/JQE.2020.3009954
Keywords
Threshold current; Quantum dot lasers; Temperature; Vertical cavity surface emitting lasers; Laser modes; Diode lasers; microdisks; quantum dots
Categories
Funding
- Russian Science Foundation [19-72-30010]
- Basic Research Program of the National Research University Higher School of Economics for optical measurements
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We discuss the effect of self-heating on performance of injection microdisk lasers operating in continuous-wave (CW) regime at room and elevated temperature. A model is developed that allows one to obtain analytical expressions for the peak optical power limited by the thermal rollover effect, the corresponding injection current and excess temperature of the device. The model predicts, there exists the maximum temperature of microlaser operation in CW regime and the minimum mircrodisk diameter, at which CW lasing is possible. The model allows one to determine the dependence of the device characteristics on its diameter and the inherent parameters, such as thermal resistance, electrical resistance, non-radiative recombination and characteristic temperature of the threshold current. It is found that a rapid growth of the threshold current density with decreasing the diameter (which takes place even in the absence of the self-heating effect) is the main internal reason leading to the dependence of the temperature characteristics of the mirodisk laser on its size. In the calculations, we used a set of parameters extracted from experiments with InGaAs quantum dot microdisk lasers. The simulation results (in particular, the light-current curve and the dependence of the minimum microdisk diameter on ambient temperature) comply well with the measured dependences.
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