Journal
COMPUTATIONAL MATERIALS SCIENCE
Volume 183, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.commatsci.2020.109886
Keywords
Defect etching; Etch pit density; Dislocation density; Crystal defects; Multicrystalline silicon; mc-Si
Categories
Funding
- German Federal Ministry of Economic Affairs and Energy [0324041B, 0324001]
Ask authors/readers for more resources
This publication contains a description and is published in combination with the source code for a tool capable of determining the etch pit density (EPD) on multicrystalline silicon image data. The algorithm is capable of classifying grain boundaries and polishing scratches and removes these structures from the analysis result. Included with the analysis code are methods for plotting EPD maps as well as relative EPD frequency. This is combined with a brief description of the experimental steps of wafer preparation and defect etching as well as a discussion of the analysis limitations.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available