Spin valve effect in sputtered FL-MoS2 and ferromagnetic shape memory alloy based magnetic tunnel junction

In the last decade, two-dimensional (2D) transition metal dichalcogenides have been introduced with great significance in the spintronic devices for their extraordinary electrical, optical, and spin-dependent properties. In this work, we have fabricated a few-layer molybdenum disulfide (FL-MoS2) (similar to 6 nm) as a non-magnetic spacer layer in Ni-Mn-In/FL-MoS2/Ni-Mn-In magnetic tunnel junction (MTJ) using DC magnetron sputtering. FL-MoS2 thin film sandwiched between two ferromagnetic shape memory alloy based electrodes exhibit semiconducting behavior, confirmed by current-voltage (I-V) characteristics and temperature dependent resistance measurement. The fabricated MTJ shows spin valve effect in the presence of an external magnetic field. The tunneling magnetoresistance (TMR) has been recorded in 10 K-300 K temperature range. The highest TMR ratio of 0.51% was obtained at a low temperature similar to 10 K, corresponding to the spin polarization of similar to 5%. This TMR ratio reduces to a value of 0.032% as the temperature of the device increases up to 300 K, displaying a finite TMR at room temperature. A detailed study of thickness and temperature-dependent magnetization versus magnetic field (M - H) hysteresis loops of Ni-Mn-In thin films has been performed to understand the complex TMR behavior. The present study paves the way for the use of sputtered FL-MoS2 and ferromagnetic shape memory alloy in ultrafast spintronics for advanced magnetic devices application.

Automated summary

In this study, few-layer molybdenum disulfide (FL-MoS2) was successfully fabricated as a non-magnetic spacer layer in a magnetic tunnel junction (MTJ), exhibiting spin valve effect in the presence of an external magnetic field. Detailed investigation on the thickness and temperature-dependent behavior of tunneling magnetoresistance (TMR) in the MTJ was conducted, providing insights for advanced magnetic device applications using sputtered FL-MoS2 and ferromagnetic shape memory alloy in ultrafast spintronics.