Journal
APPLIED SURFACE SCIENCE
Volume 527, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2020.146892
Keywords
Ferroelectric properties; Fatigue behavior; Film material; BCZT; Buffer layer
Categories
Funding
- National Natural Science Foundation of China [61372013, 51872074]
- Program for Innovative Research Team in Science and Technology in University of Henan Province [19IRTSTHN019]
- first-class discipline development project in Henan University
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The ferroelectric properties and fatigue resistance of 47(Ba0.7Ca0.3)TiO3-53Ba(Zr0.2Ti0.8)O-3(BCZT) film can be enhanced by Tb modified and adding SrTiO3(STO) buffer layer using pulsed laser deposition(PLD) method. The 0.4 mol% Tb doped BCZT/STO(0.4Tb-BCZT/STO) film possesses optimal comprehensive electrical properties. Comparing with traditional BCZT film gown on Pt, the residual polarization(P-r), piezoelectric coefficient(d(33)*), permittivity(epsilon(r)) of 0.4Tb-BCZT/STO film increase from 3.6 to 9.0 mu C/cm(2), 52 to 75 pm/V, 880 to 1210 and loss (tan theta) decrease from 0.028 to 0.017(10(4) Hz), respectively. During a high electric field, the degradation of P-r is only 5.8% and the increase of E-c is about 6.1% in 0.4Tb-BCZT/STO film after 10(9) switching cycles, which show the excellent fatigue resistance. The improved polarization and fatigue performances of film benefits from the reduced pinning influence with lower defect concentration based on a series of experiments and theoretical simulation. This work demonstrates the potential candidates of lead-free nonvolatile memory micro-devices applied in microelectronic industry.
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