4.6 Article

Molecular beam epitaxy growth and strain-induced bandgap of monolayer 1T′-WTe2 on SrTiO3(001)

Journal

APPLIED PHYSICS LETTERS
Volume 117, Issue 16, Pages -

Publisher

AIP Publishing
DOI: 10.1063/5.0020804

Keywords

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Funding

  1. National Natural Science Foundation of China [11604366, 11634007]
  2. National Natural Science Foundation of Jiangsu Province [BK 20160397]
  3. Youth Innovation Promotion Association of Chinese Academy of Sciences [2017370]

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A monolayer 1T '-WTe2 film is grown on SrTiO3(001) with in-plane tensile strain. A height of similar to 0.7nm, obvious charge transfer, and incommensurate charge fluctuations in 1T '-WTe2 suggest strong coupling to the STO substrate. Scanning tunneling spectroscopy on the surface reveals that a large energy gap opens at the Fermi level with nearly zero conductance. The opened energy gap decreases with the increase in the WTe2 island size. The lack of the metallic edge state on monolayer 1T '-WTe2/SrTiO3(001) indicates the absence of the quantum spin Hall (QSH) state. Our study here demonstrates that the energy gap of monolayer 1T '-WTe2 can be tuned by lattice strain and illustrates the importance of interface coupling to realize the metallic edge state and QSH in monolayer 1T '-WTe2. Published under license by AIP Publishing. https://doi.org/10.1063/5.0020804

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