Journal
APPLIED PHYSICS LETTERS
Volume 117, Issue 13, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/5.0024110
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Funding
- Science Challenge Project [TZ2016003]
- National Key R&D Program of China [2017YFE0100300]
- Beijing Outstanding Young Scientist Program [BJJWZYJH0120191000103]
- German Research Foundation (DFG) [INST272/148-1]
- Collaborative Research Center Semiconductor Nanophotonics: Materials, Models, Devices [SFB 787]
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AlN/GaN/AlN quantum disks (Q-disks) embedded in self-assembled hexagonally shaped GaN nanowires have been grown on the Si (111) substrate by plasma-assisted molecular beam epitaxy. To correlate the structural and optical properties of individual Q-disks inside the nanowire, highly spatially resolved cathodoluminescence (CL) spectroscopy in a scanning transmission electron microscope has been performed at 18K. CL spectrum linescans along a single nanowire clearly identify the emission from the GaN base around 354nm as well as two recombination channels at 347nm and 330nm directly correlated with the AlN/GaN/AlN Q-disk. A detailed characterization of these individual quantum objects is presented.
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